SPONTANEOUS DIRECT BONDING OF THICK SILICON-NITRIDE

Authors
SANCHEZ S GUI C ELWENSPOEK M
Citation
S. Sanchez et al., SPONTANEOUS DIRECT BONDING OF THICK SILICON-NITRIDE, Journal of micromechanics and microengineering, 7(3), 1997, pp. 111-113
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Mechanical
Journal title
Journal of micromechanics and microengineering → ACNP
ISSN journal
09601317
Volume
7
Issue
3
Year of publication
1997
Pages
111 - 113
Database
ISI
SICI code
0960-1317(1997)7:3<111:SDBOTS>2.0.ZU;2-H
Abstract
Wafers with 1 mu m LPCVD silicon-rich nitride layers have been success fully direct bonded to silicon-rich nitride and boron-doped silicon su rfaces. A chemical-mechanical polishing treatment was necessary to red uce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to value s found for Si-Si hydrophilic bonding. A mechanism similar to this bon ding is suggested for silicon nitride bonding.