COMPARATIVE CHARACTERIZATION OF CHEMICAL-VAPOR-DEPOSITION DIAMOND FILMS BY SCANNING CATHODOLUMINESCENCE MICROSCOPY

Thin diamond films grown by chemical vapor deposition (CVD) process on Si substrates under similar deposition conditions in the microwave-ex cited (MW) and direct current (DC) plasma discharges were taken for co mparative examination. Raman spectra, photoluminescence (PL) spectrosc opy, and color cathodoluminescence scanning electron microscopy (CCL-S EM) have been used for characterization of the structure and compositi on features of polycrystalline diamond films. No essential difference in Raman spectra for the CVD diamond films was detected. A significant difference was revealed in the PL spectra and in CCL-SEM images.