NANOCRYSTALS OF CDSE IN THIN-FILM SIOX MATRIX

Authors
Citation
D. Nesheva et Z. Levi, NANOCRYSTALS OF CDSE IN THIN-FILM SIOX MATRIX, Semiconductor science and technology, 12(10), 1997, pp. 1319-1322
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
12
Issue
10
Year of publication
1997
Pages
1319 - 1322
Database
ISI
SICI code
0268-1242(1997)12:10<1319:NOCITS>2.0.ZU;2-M
Abstract
Nanocrystals of CdSe have been produced in an SiOx thin film matrix by thermal vacuum evaporation of SiO and CdSe. A new way of forming CdSe nanoclusters in the matrix has been used. The average size of the CdS e nanocrystals, between 2.4 nm and 6.0 nm, has been estimated from the (110) maximum in the x-ray diffraction spectra. Quantum size increase of the optical bandgap of the CdSe nanocrystals has been observed. A good coincidence between the average size of the nanocrystals calculat ed from the observed bandgap increase and x-ray diffraction measuremen t has been obtained. The substructure observed in the nanocrystal abso rption can be related to relatively small nanocrystal size fluctuation s around the average size.