A NOVEL GAAS STRUCTURE FOR TERAHERTZ GENERATORS DRIVEN BY PLASMA INSTABILITY

Authors
SHIKTOROV P GRUZINSKIS V STARIKOV E REGGIANI L VARANU L
Citation
P. Shiktorov et al., A NOVEL GAAS STRUCTURE FOR TERAHERTZ GENERATORS DRIVEN BY PLASMA INSTABILITY, Semiconductor science and technology, 12(10), 1997, pp. 1331-1334
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
10
Year of publication
1997
Pages
1331 - 1334
Database
ISI
SICI code
0268-1242(1997)12:10<1331:ANGSFT>2.0.ZU;2-H
Abstract
An n(++)nn(+)n(++) GaAs structure is proposed for microwave power gene ration in the terahertz frequency region. The structure allows one bot h to realize within a mean free path distance a quasi-ballistic beam o f hot electrons moving through a cold plasma and to use intervalley tr ansfer to upper valleys as a strong mechanism for beam modulation. Kin etic energy is thus transferred from hot electrons to coherent plasma oscillations. The main features of such a generator are investigated b y the Monte Carlo particle simulation.