A NOVEL GAINNAS-GAAS QUANTUM-WELL STRUCTURE FOR LONG-WAVELENGTH SEMICONDUCTOR-LASERS

We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 mu m or longer wavelength light, The idea is insert ion of lattice-matched GaInNA's intermediate layers between wed and ba rrier, which is effective for elongating the emission wavelength and r educing web thickness. It is shown that 1.3-mu m emission is achievabl e by using the proposed GaInNAs-GaAs QW with a web thickness thinner t han that of conventional rectangular GaInNA's QW's, This structure wil l relax the design limitation of strained GaInNA's layers.