HIGH-POWER INALGAAS-GAAS LASER-DIODE EMITTING NEAR 731 NM

Authors
EMANUEL MA SKIDMORE JA JANSEN M NABIEV R
Citation
Ma. Emanuel et al., HIGH-POWER INALGAAS-GAAS LASER-DIODE EMITTING NEAR 731 NM, IEEE photonics technology letters, 9(11), 1997, pp. 1451-1453
Citations number
20
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
9
Issue
11
Year of publication
1997
Pages
1451 - 1453
Database
ISI
SICI code
1041-1135(1997)9:11<1451:HILEN7>2.0.ZU;2-Q
Abstract
High-power, reliable operation of an ZnAlGaAs-based laser diode struct ure emitting near 731 mm and having a strained InAlGaAs active region is described. Threshold currents for coated 100 mu m x 1000 mu m devic es are 281 mA, and a peak power conversion efficiency of 41% is measur ed, Internal losses are measured to be 1.2 cm(-1). A system for fiber- coupling two-dimensional continuous-wave (CW) arrays of these devices is demonstrated.