INTERFACE DISLOCATIONS FORMING DURING EPITAXIAL-GROWTH OF GESI ON (111)SI SUBSTRATES AT HIGH-TEMPERATURES

Authors
Citation
F. Ernst, INTERFACE DISLOCATIONS FORMING DURING EPITAXIAL-GROWTH OF GESI ON (111)SI SUBSTRATES AT HIGH-TEMPERATURES, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 233(1-2), 1997, pp. 126-138
Citations number
33
Categorie Soggetti
Material Science
ISSN journal
09215093
Volume
233
Issue
1-2
Year of publication
1997
Pages
126 - 138
Database
ISI
SICI code
0921-5093(1997)233:1-2<126:IDFDEO>2.0.ZU;2-H
Abstract
During high-temperature epitaxial growth of GeSi layers on (111) Si su bstrates the relaxation of misfit stresses produces regular misfit dis location networks in the GeSi/Si interface. In these networks the misf it dislocations dissociate into Shockley partial dislocations with Bur gers vectors parallel to the interface. The dissociation leaves behind intrinsic and extrinsic stacking faults, which cover a major fraction of the GeSi/Si interface. Observations on the early stages of layer g rowth indicate that the GeSi grows layer by layer, and that the critic al layer thickness for misfit stress relaxation corresponds to the thi ckness expected from the energy criterion of Matthews and Blakeslee. E xperimental observations of misfit dislocations forming during cyclic healing of as-grown GeSi/Si layers reveal the mechanisms by which misf it dislocations with Burgers vectors parallel to the GeSi interface ca n form. (C) 1997 Elsevier Science S.A.