A DISCLINATION MODEL FOR THE TWIN-TWIN INTERSECTION AND THE FORMATIONOF DIAMOND-HEXAGONAL SILICON AND GERMANIUM

Authors
MULLNER P PIROUZ P
Citation
P. Mullner et P. Pirouz, A DISCLINATION MODEL FOR THE TWIN-TWIN INTERSECTION AND THE FORMATIONOF DIAMOND-HEXAGONAL SILICON AND GERMANIUM, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 233(1-2), 1997, pp. 139-144
Citations number
30
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
233
Issue
1-2
Year of publication
1997
Pages
139 - 144
Database
ISI
SICI code
0921-5093(1997)233:1-2<139:ADMFTT>2.0.ZU;2-D
Abstract
A twin-twin intersection mechanism for twinning in semiconductors is p resented. The mechanism is based on the disclination character of twin s and accounts for all experimental findings including the diamond-hex agonal structure, the twin/matrix orientation relationship, and the sh ape of the intersected volume, as well as irregularities within the tr ansformed region such as slacking faults and diamond cubic bands. The formation of long narrow diamond-hexagonal bands is proposed to be due to a similar mechanism where a second-order twin penetrates into the matrix. (C) 1997 Elsevier Science S.A.