MAGNETORESISTANCE OF HGSES CRYSTALS AT HYDROSTATIC PRESSURES OF UP TO1 GPA

Citation
Vv. Shchennikov et al., MAGNETORESISTANCE OF HGSES CRYSTALS AT HYDROSTATIC PRESSURES OF UP TO1 GPA, Physics of the solid state, 39(10), 1997, pp. 1528-1532
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637834
Volume
39
Issue
10
Year of publication
1997
Pages
1528 - 1532
Database
ISI
SICI code
1063-7834(1997)39:10<1528:MOHCAH>2.0.ZU;2-V
Abstract
Magnetoresistance (MR) of HgSe1-xSx crystals has been studied in the t emperature range 4.2-300 K and in magnetic fields up to 12 T under hyd rostatic pressures P exceeding the threshold P-t for the structural ph ase transition. Shubnikov-de Haas quantum oscillations in longitudinal and transverse MR were observed to occur in the original samples at T =4.2 K. For P>P-t, HgSeS crystals transferred to metastable states, wh ich presumably incorporate the high- and low-pressure phases, and in w hich the oscillations vanished. At the same time the monotonic behavio r of MR with magnetic field B, as well as the temperature dependences of resistivity rho retained the shape characteristic of the original p hases. The observed weakening of the dependences of rho on B and T is attributed to an increase of the temperature-independent contribution to rho caused by phase inclusions and structural defects in the metast able states. It is the corresponding decrease of electron mobility tha t suppresses the oscillations. (C) 1997 American Institute of Physics.