The temperature dependences (80-500 K) of the Hall coefficient and the
resistivity of samples of schungite of types I and III (schungite I a
nd schungite III), as well as a commercial glassy carbon, with carbon
contents equal to 98, 30, and 99.99%, respectively, are measured. The
character of the dependences of the resistivity and its numerical valu
es are similar to those observed in polycrystalline graphites with a h
igh degree of disorder and in synthetic glassy carbon. Conversely, the
Hall coefficient in the schungite samples, as in high-quality single
crystals and n-type intercalated compounds of graphite, is found to be
negative, small in magnitude, and weakly dependent on the temperature
. At room temperature it is equal to 2.83 X 10(-2) and 0.305 cm(3)/C i
n schungite I and schungite III, respectively, the Hall mobility of th
e charge carriers in these materials is 8.0 and 9.2 cm(2)/V . s, and t
he Hall carrier concentration is 2.2 X 10(20) and 2.0 X 10(19) cm(-3).
(C) 1997 American Institute of Physics.