MEASUREMENT OF DECAY TIME FOR THE NV CENTER IN IB DIAMOND WITH A PICOSECOND LASER-PULSE

Citation
H. Hanzawa et al., MEASUREMENT OF DECAY TIME FOR THE NV CENTER IN IB DIAMOND WITH A PICOSECOND LASER-PULSE, DIAMOND AND RELATED MATERIALS, 6(11), 1997, pp. 1595-1598
Citations number
14
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
6
Issue
11
Year of publication
1997
Pages
1595 - 1598
Database
ISI
SICI code
0925-9635(1997)6:11<1595:MODTFT>2.0.ZU;2-F
Abstract
The luminescence decay time of the NV center in synthetic Ib diamonds has been measured using the picosecond excitation system at room tempe rature and ca 5 K. The decay profile with two exponential components o f 2.0+/-0.1 ns and 8.0+/-0.2 ns has been obtained at room temperature. Around 5 K, the long decay component becomes slightly longer. The dec ay times observed at 637.5 nm of the zero-phonon line and at 670 nm in the phonon-side band are independent of wavelength. This value is com pared with the previous value observed by other workers. (C) 1997 Else vier Science S.A.