New absorption line of 0.545 eV has been observed in type Ib diamond h
eavily neutron irradiated and annealed at a temperature higher than 14
00 degrees C. This defect is bleached by illumination of higher than 1
.9 eV in photon energy. The recovery process after the excitation ligh
t was turned off contains electron tunnelling. (C) 1997 Elsevier Scien
ce S.A.