A FIRST-PRINCIPLES FULLY SPACE-TIME RESOLVED MODEL OF A SEMICONDUCTOR-LASER

We present a semiconductor laser model which incorporates the gain ban dwidth and nonlinear gain by using the multi-band microscopic theory o f an electron-hole plasma in a semiconductor quantum-well medium. The approach is extremely robust, allowing us to take into account importa nt many-body effects, as well as material and structural parameters of a given laser device. As a specific illustrative example, we resolve for the first time, the full multi-longitudinal mode and transverse fi lamentation instabilities of a master-oscillator power amplifier (MOPA ) device.