OFF-AXIS PULSED-LASER DEPOSITION OF CEO2 BUFFER AND YBA2CU3O7-DELTA THIN-FILM ON BOTH SIDES OF A SAPPHIRE SUBSTRATE IN A ONE-STEP PROCESS

Authors
VRATSKIKH VF DROZDOV YN TALANOV VV
Citation
Vf. Vratskikh et al., OFF-AXIS PULSED-LASER DEPOSITION OF CEO2 BUFFER AND YBA2CU3O7-DELTA THIN-FILM ON BOTH SIDES OF A SAPPHIRE SUBSTRATE IN A ONE-STEP PROCESS, Superconductor science and technology, 10(10), 1997, pp. 766-768
Citations number
14
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter
Journal title
Superconductor science and technology → ACNP
ISSN journal
09532048
Volume
10
Issue
10
Year of publication
1997
Pages
766 - 768
Database
ISI
SICI code
0953-2048(1997)10:10<766:OPDOCB>2.0.ZU;2-V
Abstract
Microwave surface resistance values of 0.6 m Omega at a temperature 77 K and frequency 10 GHz were measured on YBa2Cu3O7-delta thin films pr epared on both sides of a CeO2-buffered R-Al2O3 substrate by off-axis pulsed laser deposition in a one-step process. The duration of the com pletely in situ fabrication of the double-sided YBa2Cu3O7/CeO2 film wa s determined io be 35 min. The use of the modified oven design heater enabled an adequately stable and precise temperature control during th e deposition ore a free-sanding substrate.