GENERATION OF VGATEASVAS COMPLEXES IN TELLURIUM-DOPED N-TYPE GAAS BY LOW-TEMPERATURE ANNEALING

Authors
GLINCHUK KD PROKHOROVICH AV
Citation
Kd. Glinchuk et Av. Prokhorovich, GENERATION OF VGATEASVAS COMPLEXES IN TELLURIUM-DOPED N-TYPE GAAS BY LOW-TEMPERATURE ANNEALING, Crystal research and technology, 32(6), 1997, pp. 837-842
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
32
Issue
6
Year of publication
1997
Pages
837 - 842
Database
ISI
SICI code
0232-1300(1997)32:6<837:GOVCIT>2.0.ZU;2-I
Abstract
It is shown that loci-temperature annealing (T = 425 to 625 degrees C, t greater than or equal to 0.5 h) of tellurium-doped n-type GaAs crys tals (n(0) = 2 x 10(18) cm(-3)) leads to a generation of VGaTeAsVAs co mplexes as a result of a diffusion of arsenic vacancies to VGaTeAs com plexes or arsenic and gallium vacancies to isolated tellurium atoms. T he observed regularities of generation of VGaTeAsVAs complexes as the annealing temperature and the annealing time are varied are well expla ined by the proposed model of diffusion-limited formation of VGaTeAsVA s complexes.