INFLUENCE OF SUBSTITUTIONS ON THE PHYSICAL-PROPERTIES OF CEINCU2

We present x-ray diffraction and electrical resistivity measurements o n two series of compounds: CeIn1-xMxCu2 (M = Al, Ga and Sn) and CeIn(C u1-xTx)(2) (T = Fe, Ni, Pd and Pt) with x less than or equal to 0.2. T he change in electrical resistivity with alloying is discussed in term s of the effect of this on the Kondo interaction and crystalline elect ric field splitting. These are influenced by two different mechanisms: the unit-cell volume and the number of conduction electrons of the sy stems.