SILICON QUANTUM-DOT SUPERLATTICE AND METALLIC CONDUCTING BEHAVIOR IN POROUS SILICON

A metallic conducting effect has been observed in a blue emitting poro us silicon sample. In the sample, which was prepared using a hydrother mal etching process followed by oxidation treatment at 950 degrees C f or 30 s, it was observed that the resistance decreased linearly with d ecreasing temperature and became constant near 10 K. A possible mechan ism for the observed effect is discussed in view of the silicon quantu m dot superlattice structure observed in the sample.