IMPROVING THE OPERATIONAL RELIABILITY OF TRANSISTORS AND WIDENING THEIR AREA OF APPLICATION

A generalized mathematical model of diffusion processes in a monocryst al has been developed. A method for improving the stability of transis tors and increasing their power in operational conditions is substanti ated. The efficiency of hard electrical preconditioning of transistors with a collector current approximately 10 times higher than its rated value has been experimentally confirmed. The method is recommended fo r stabilizing transistor or integrated circuit parameters and improvin g their operational stability during long-term operation in conditions of forced loads. Some aspects of extended use of transistors in power electronics are considered. (C) 1997 Elsevier Science Ltd. All rights reserved.