In the study of semiconductor degradation, records of transconductance
loss or threshold voltage shift over time are useful in constructing
the cumulative distribution function (cdf) of the time until the degra
dation reaches a specified level. In this article, we propose a model
with random regression coefficients and a standard-deviation function
for analyzing linear degradation data. Both analytical and empirical m
otivations of the model are provided. We estimate the model parameters
, the cdf, and its quantiles by the maximum likelihood (ML) method and
construct confidence intervals from the bootstrap, from the asymptoti
c normal approximation. and from inverting likelihood ratio tests. Sim
ulations are conducted to examine the properties of the ML estimates a
nd the confidence intervals. Analysis of an engineering dataset illust
rates the proposed procedures.