ANNEALING EFFECTS FOR STRUCTURAL DEFECTS OF SILICON-NITRIDE CERAMICS

Authors
MUNAKATA F SATO C HIROSAKI N TANIMURA M AKIMUNE Y OKAMOTO Y INOUE Y
Citation
F. Munakata et al., ANNEALING EFFECTS FOR STRUCTURAL DEFECTS OF SILICON-NITRIDE CERAMICS, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 105(10), 1997, pp. 858-861
Citations number
16
Categorie Soggetti
Material Science, Ceramics
Journal title
Nippon Seramikkusu Kyokai gakujutsu ronbunshi → ACNP
ISSN journal
09145400
Volume
105
Issue
10
Year of publication
1997
Pages
858 - 861
Database
ISI
SICI code
0914-5400(1997)105:10<858:AEFSDO>2.0.ZU;2-S
Abstract
The structural defects of beta-Si3N4 grains were investigated by trans mission electron microscopy (TEM). TEM analysis suggested the existenc e of dislocation, and or-type structure in beta-Si3N4 grains. In patic ular, TEM analysis of Si3N4 seeds annealed at 2473 K under 30 MPa in N -2 indicated that the beta-Si3N4 grains contain an alpha-Si3N4 structu re.