Ia. Rauf et al., ENGINEERING INDIVIDUAL GRAIN-BOUNDARIES USING A ZONE-CONFINING PROCESS IN CHEMICAL-VAPOR-DEPOSITED CU FILMS, Applied physics letters, 71(16), 1997, pp. 2256-2258
Materials scientists have struggled for a while to find a process whic
h can be used to engineer individual grain boundaries separating two a
djacent grains. Considerable effort has also been devoted to finding a
technique that can control the orientation of individual grains. A te
mperature gradient applied during the chemical vapor deposition of thi
n copper films provides an effect such that chains of grains oriented
in the same direction are produced at chosen positions in the film. As
a result of an interaction between defect migration and crystal growt
h, interconnected grains, oriented in the [110] direction and separate
d by twin grain boundaries, form chains along contours of equal temper
ature, When the temperature gradient is small, low-angle tilt boundari
es, low-energy coincidence-site boundaries, and twin boundaries are ob
served. For a sharp temperature gradient, all boundaries are coherent
twin boundaries. (C) 1997 American Institute of Physics.