LONG-WAVELENGTH INFRARED PHOTODETECTORS BASED ON INSBBI GROWN ON GAASSUBSTRATES

We demonstrate the operation of InSbBi infrared photoconductive detect ors grown by low-pressure metalorganic chemical vapor deposit ion on s emi-insulating GeAs substrates, The fabricated photodetector showed a cutoff wavelength of 7.7 mu m at 77 K. The responsivity of the InSbBi photodetector at 7 mu m was about 3.2 V/W at 77 K. The corresponding J ohnson-noise limited detectivity was 4.7 X 10(8) cm Hz(1/2)/W. The car rier lifetime was estimated to be about 86 ns from the voltage-depende nt responsivity measurements. (C) 1997 American Institute of Physics.