THE INFLUENCE OF BORON LOCALIZED VIBRATIONS ON THE EQUILIBRIUM DISTRIBUTION OF BORON BETWEEN THE SURFACE AND BULK OF A SILICON CRYSTAL

Authors
IPATOVA IP CHIKALOVALUZINA OP MARADUDIN AA
Citation
Ip. Ipatova et al., THE INFLUENCE OF BORON LOCALIZED VIBRATIONS ON THE EQUILIBRIUM DISTRIBUTION OF BORON BETWEEN THE SURFACE AND BULK OF A SILICON CRYSTAL, Solid state communications, 104(5), 1997, pp. 277-280
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
104
Issue
5
Year of publication
1997
Pages
277 - 280
Database
ISI
SICI code
0038-1098(1997)104:5<277:TIOBLV>2.0.ZU;2-9
Abstract
The distribution coefficient of boron in the system of silicon crystal + boron surface phase is calculated in a wide temperature range. A re alistic model of the lattice vibrations of silicon is used. The effect of boron localized vibrations is included in the calculation. It is s hown that the boron localized vibrations significantly decrease the di stribution coefficient and impede the penetration of the boron atoms i nto the interior of the silicon crystal. (C) 1997 Elsevier Science Ltd .