Hw. Yoon et al., MAGNETIC-FIELD-INDUCED MOTT TRANSITION OF A ONE-COMPONENT ELECTRON-PLASMA IN GAAS QUANTUM-WELLS, Solid state communications, 104(5), 1997, pp. 287-291
We have measured the time-resolved magneto-photoluminescence of mixed
type GaAs/AlAs quantum wells, in which the electron density can be var
ied from similar to 10(9) to similar to 10(11) cm(-2). We confirm that
as the electron density is increased the precursor of the Mott transi
tion is the trion (negatively charged exciton) and that the transition
occurs when the Landau level filling factor nu = 2. In zero held the
transition is broad and ill-defined, but in a held it is sharp and is
accompanied by an abrupt change in linewidth and radiative lifetime. (
C) 1997 Elsevier Science Ltd.