PHOTOSELECTIVE METAL-DEPOSITION ON AMORPHOUS-SILICON P-I-N SOLAR-CELLS

A novel method is described for the patternwise metallization of amorp hous silicon solar cells, based on photocathodic deposition. The elect ric field of the p-i-n structure is used for the separation of photoge nerated charge carriers. The electrons are driven to the interface of the n(+)-layer with the solution where they reduce metal ions to metal . The large difference between the conductivity of dark and illuminate d areas and the high sheet resistance of the n-type layer makes it pos sible to define a metal pattern by selective illumination. It is shown that both nickel and gold patterns can be deposited using this method . After annealing, an ohmic nickel contact is formed and the cell exhi bits good photovoltaic characteristics.