H. Cachet et al., EPITAXIAL CDSE FILMS CHEMICALLY DEPOSITED ON INP SINGLE-CRYSTALS - INFLUENCE OF THE GROWTH-MECHANISM, Journal of the Electrochemical Society, 144(10), 1997, pp. 3583-3589
Epitaxial growth of cadmium selenide on ((111) over bar) InP single cr
ystals is achieved by chemical bath deposition in cadmium sulfate and
sodium selenosulfate solutions complexed by sodium nitrilotriacetate.
Correlations are established between the growth mechanism, studied by
means of a quartz crystal microbalance, and the CdSe epitaxial quality
evaluated by means of x-ray diffraction and electron microscopy. It i
s shown that the formation of CdSe films can be described by a layer-b
y-layer mechanism. Correlatively the epitaxy of CdSe on InP substrates
occurs when the thickness of each layer is close to one lattice unit.
Epitaxial CdSe layers present a cubic blende structure with a density
of twins which depends on the growth conditions.