We report on THz emission from plasma oscillations in semiconductors e
xcited by femtosecond optical pulses. Time-resolved correlation measur
ements are performed on p-i-n and n-doped GaAs structures. In p-i-n st
ructures coherent oscillations of the hot photogenerated carrier plasm
a emit THz radiation. A fundamentally new emission process is proposed
in n-doped GaAs structures. Here, the screening of the surface field
starts plasma oscillations of the cold electrons in the GaAs bulk lead
ing to an efficient emission of few-cycle THz radiation.