Cu2GeS3, a I-2 IV VI3 semiconductor, has been prepared by solid state
reaction of the constituent elements in vacuum-sealed quartz ampoules
and structurally characterized using single crystal X-ray diffraction
techniques. It crystallizes in the monoclinic space group Cc [No. 9],
with a = 6.449(2), b = 11.319(3), c = 6.428(2) Angstrom, beta = 108.37
(2)degrees, and Z = 4. This material is isotypic with Cu2SnS3, a recen
tly reported type of structure which is based on a cubic close-packed
array of sulfur atoms and can be viewed as a sphalerite super-structur
e. The final disagreement factors of the structure refinement carried
out with SHELXL-93 were R(F) = 0.0454, wR(F-2) = 0.1087 and S = 1.103
for all 557 independent reflections merged from the 1086 reflections m
easured. Copyright (C) 1997 Elsevier Science Ltd.