SINGLE-CRYSTAL GROWTH AND CHARACTERIZATION OF NISE2

A method is described for growth of single crystals of NiSe2, from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, i n repetitive regrindings, and in slowly removing the sample from the f urnace. The electrical and magnetic properties of the crystals are bri efly described; no prior measurements of resistivity have. been report ed below room temperature. A theoretical analysis shows that NiS1.93 i s a metal exhibiting weak correlation effects. Copyright (C) 1997 Else vier Science Ltd.