TRIPLET-STATES IN SILOXENE AND POROUS SILICON

Citation
H. Pioch et al., TRIPLET-STATES IN SILOXENE AND POROUS SILICON, Chemical physics letters, 277(1-3), 1997, pp. 89-95
Citations number
21
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
ISSN journal
00092614
Volume
277
Issue
1-3
Year of publication
1997
Pages
89 - 95
Database
ISI
SICI code
0009-2614(1997)277:1-3<89:TISAPS>2.0.ZU;2-#
Abstract
Zero-field optically detected magnetic resonance (Zf-ODMR) investigati ons have revealed a broad distribution of the fine structure constants in crystalline siloxene and in porous silicon attributed to a broad d istribution of triplet states in both materials. By time-resolved ODMR , a triplet emission (phosphorescence) can be identified. The electron ic triplet energy and the spin-spin separation distance of the triplet spins are correlated via the decay times of time-resolved optical and ODMR spectroscopy. The light emitting states, the lowest triplet and the associated singlet state, have molecular character. A possible cha rge transfer character of the triplet state is discussed. (C) 1997 Els evier Science B.V.