FACILE FABRICATION PROCEDURE FOR C-60-DOPED SILICON-OXIDE THIN-FILMS

Authors
HASEGAWA I SHIBUSA K KOBAYASHI S NONOMURA S NITTA S
Citation
I. Hasegawa et al., FACILE FABRICATION PROCEDURE FOR C-60-DOPED SILICON-OXIDE THIN-FILMS, Chemistry Letters, (10), 1997, pp. 995-996
Citations number
13
Categorie Soggetti
Chemistry
Journal title
Chemistry Letters → ACNP
ISSN journal
03667022
Issue
10
Year of publication
1997
Pages
995 - 996
Database
ISI
SICI code
0366-7022(1997):10<995:FFPFCS>2.0.ZU;2-3
Abstract
C-60-doped silicon oxide thin films can be prepared easily by sol-gel processing using a mixture of phenyltriethoxysilane and tetraethoxysil ane as the silicon oxide sources. Preparation of C-60-dissolved single -phase starting solutions is practicable by employing phenyltriethoxys ilane which acts as a solubilization agent of C-60 as well as the sili con oxide source.