STUDY OF THE QUENCHED DEFECTS IN TIAL ALLOY BY POSITRON-ANNIHILATION

Citation
By. Wang et al., STUDY OF THE QUENCHED DEFECTS IN TIAL ALLOY BY POSITRON-ANNIHILATION, Physica status solidi. a, Applied research, 163(1), 1997, pp. 33-37
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
163
Issue
1
Year of publication
1997
Pages
33 - 37
Database
ISI
SICI code
0031-8965(1997)163:1<33:SOTQDI>2.0.ZU;2-4
Abstract
The recovery behavior of quenched-in defects in TiAl alloys was studie d by positron annihilation lifetime measurements. The results indicate that there is a certain number of grain boundaries in fully annealed TiAl samples, and after being quenched, the samples contain quite a lo t of secondary defects such as vacancy clusters besides a large amount of mono-vacancies. The vacancy clusters aggregate further in the temp erature range from 300 to 600 degrees C due to the impurity atoms.