INFLUENCE OF GROWTH-PARAMETERS ON THE SURFACE AND INTERFACE QUALITY OF LASER-DEPOSITED INSB CDTE HETEROSTRUCTURES/

The pulsed laser deposition technique has been employed for the growth of single crystalline oriented films of indium antimonide on bulk cad mium telluride substrates. The films grown during: this study were tes ted for surface duality and interface features. generally prevalent du e to film-substrate reactions. The composition of the grown film was f ound to deviate from that of the target owing to loss of antimony duri ng evaporation, leading to tile formation of an interfacial compound. The antimony deficiency in the films was compensated by correcting the target composition. Growth parameters and their effects on these mani festations have been studied. The optimization of these parameters has led to growth of layers with good surface morphology and abrupt inter faces. Efforts have been made to detect the origin of the diffuse inte rface and to identify the compound resulting at the interface through photoluminescence spectroscopy. Using PL and thermoenergetic calculati ons for the plausible reactions at the interface, we have ascertained that the interfacial compound is more likely to be In2Te3.