Wk. Choi et Fw. Poon, ELECTRICAL CHARACTERIZATION OF METAL THIN OXIDE SILICON TUNNEL-DIODESPREPARED BY RAPID THERMAL ANNEALING, Physica status solidi. a, Applied research, 163(1), 1997, pp. 129-140
We present electrical results of metal-thin oxide-silicon tunnel diode
s fabricated on rapid thermal anneal (RTA) silicon wafers with native
oxide layers. The annealing temperature is crucial in deciding whether
a Schottky or a tunnel diode is obtained as a result of RTA. In the r
everse bias direction, the degree oi inversion at tile silicon surface
was found to depend on the illumination intensity and this has a dire
ct effect on the magnitude of the tunnel current. Devices with gold an
d aluminium top contacts resulted in minority and majority carrier tun
nel diodes, respectively. The capacitance versus voltage measurements
confirmed tile results obtained from the current versus voltage and X-
ray photoelectron experiments. The interface trap and the fixed charge
densities of our devices reduced as the annealing; temperature or ann
ealing time increased.