The discovery of colossal magnetoresistance in perovskite manganites d
erived from LaMnO3 has renewed interest in these and related materials
for possible technological applications(1-7). But the high magnetic f
ields and narrow temperature windows where the large magnetoresistive
responses are observed present daunting limitations. A possible avenue
for overcoming these limitations is to improve the low-field response
by modifying the manganites to enhance the contribution to magnetores
istance from spin-polarized tunnelling of the conduction electrons; su
ch tunnelling, which can be very sensitive to an applied magnetic fiel
d, takes place across grain boundaries (natural or artificial) or betw
een the manganite planes of the layered derivatives of the perovskite
compounds(8-13). Here ive show that low-field (H < 1 kOe) grain-bounda
ry magnetoresistance can also be realized in a non-perovskite magnetor
esistive oxide, the pyrochlore Tl2Mn2O7. Moreover, this low-field resp
onse, which persists for all temperatures below the transition to the
ferromagnetic state, does not show the strong temperature-dependent de
cay characteristic of the perovskite-based systems. We suggest that th
is improved response is in part due to weaker electron-spin coupling a
nd the lack of strong electron-lattice interactions in the pyrochlore.