NONEQUILIBRIUM 1 F NOISE IN AMORPHOUS-SILICON

Citation
G. Snyder et al., NONEQUILIBRIUM 1 F NOISE IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 56(15), 1997, pp. 9205-9208
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
15
Year of publication
1997
Pages
9205 - 9208
Database
ISI
SICI code
0163-1829(1997)56:15<9205:N1FNIA>2.0.ZU;2-S
Abstract
Hydrogenated amorphous silicon (a-Si:H) is known to exhibit very large 1/f noise with interesting non-Gaussian statistics and nonlinear depe ndence on applied de current. We find that the 1/f noise persists, and is approximately linear in current when probed with very small ac cur rents. The results are consistent with noise from equilibrium motions of small clusters of H.