We present an extension to finite temperatures of the Mahari-Nozieres-
De Dominicis framework to study both the many-body and temperature eff
ects in absorption spectra of doped semiconductors. The method is used
to study magnetoabsorption spectra of modulation-doped quantum wells
with a weak periodic lateral modulation. In our scheme, temperature ef
fects in the electronic part of the correlation function characterize
the absorption spectra. We treat the valence-hole contribution to the
absorption correlation function in second-order perturbation. The time
-dependent hole self-energy to second order, F-2(t), and the creation
rate of a conduction electron-hole pair R(omega), are carefully discus
sed. The temperature dependence of such quantities as well as their in
fluence on the absorption spectra is analyzed. As a practical applicat
ion, we investigate the effect of the hole position on the absorption
spectra.