DEFECT CREATION ON GE(111)-C(2X8) BY THERMAL C-60 DEPOSITION STUDIED WITH STM

Citation
Kr. Wirth et J. Zegenhagen, DEFECT CREATION ON GE(111)-C(2X8) BY THERMAL C-60 DEPOSITION STUDIED WITH STM, Physical review. B, Condensed matter, 56(15), 1997, pp. 9864-9870
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
15
Year of publication
1997
Pages
9864 - 9870
Database
ISI
SICI code
0163-1829(1997)56:15<9864:DCOGBT>2.0.ZU;2-I
Abstract
We study the modification of the Ge(111)-c(2x8) surface caused by the adsorption of individual C-60 molecules. C-60 was evaporated onto the substrate in situ while imaging with the scanning tunneling microscope . Many adsorbed C-60 molecules produced a shift of a part of a Ge adat om row by one surface lattice constant. However, a considerable number of C-60 molecules did not visibly disturb the arrangement of the Ge a datoms. Further changes of Ge adatom positions close to already adsorb ed C-60 molecules were observed following the adsorption process of ot her C-60 molecules at distances exceeding 10 nm.