A thermal desorption spectrometry study of hydrogen from silicon germa
nium alloys is presented. Amorphous Si1-xGex:H (0 less than or equal t
o x less than or equal to 1) thin films were prepared by ion beam assi
sted evaporation on a substrate maintained at 120 degrees C, Infrared
spectrometry experiments showed that these alloys essentially contain
silicon and germanium dihydride sites. Effusion experiments allowed us
to deduce the Gibbs free energy of hydrogen desorption from the SiH a
nd GeH sites as a function of the germanium content. (C) 1997 Elsevier
Science B.V.