INVESTIGATION ON THE SURFACE REACTIVITY OF LUMINESCENT POROUS SILICON

Authors
YIN F LI XP ZHANG ZZ XIAO XR
Citation
F. Yin et al., INVESTIGATION ON THE SURFACE REACTIVITY OF LUMINESCENT POROUS SILICON, Applied surface science, 119(3-4), 1997, pp. 310-312
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
119
Issue
3-4
Year of publication
1997
Pages
310 - 312
Database
ISI
SICI code
0169-4332(1997)119:3-4<310:IOTSRO>2.0.ZU;2-G
Abstract
The photoluminescent quenching by chemical adsorption was studied on H NO3 chemically oxidized and as-prepared porous silicon. The improvemen t of photoluminescent stability, coexistent with the strong sensitivit y of photoluminescence to organic adsorbates was revealed in the HNO3 chemically oxidized porous silicon. The dependence of the polarity of organic adsorbates on the photoluminescent quenching of both porous si licon was examined and compared. (C) 1997 Elsevier Science B.V.