NORMAL-STATE HALL-EFFECT AND THE INSULATING RESISTIVITY OF HIGH-T-C CUPRATES AT LOW-TEMPERATURES

Citation
Y. Ando et al., NORMAL-STATE HALL-EFFECT AND THE INSULATING RESISTIVITY OF HIGH-T-C CUPRATES AT LOW-TEMPERATURES, Physical review. B, Condensed matter, 56(14), 1997, pp. 8530-8533
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
14
Year of publication
1997
Pages
8530 - 8533
Database
ISI
SICI code
0163-1829(1997)56:14<8530:NHATIR>2.0.ZU;2-Q
Abstract
The normal-state Hall coefficient R-H and the in-plane resistivity rho (ab) are measured in La-doped Bi2Sr2CuOy (T-c similar or equal to 13 K ) single crystals and La2-xSrxCuO4 thin films by suppressing supercond uctivity with 61-T pulsed magnetic fields. In contrast to data above T -c, the R-H below similar to 10 K shows little temperature dependence in all the samples measured, irrespective of whether rho(ab) exhibits insulating or metallic behavior. Thus, whatever physical mechanism giv es rise to insulating behavior in the low-temperature normal state, it leaves the Hall conductivity relatively unchanged.