EXTREMELY NARROW SB DELTA-DOPED EPITAXIAL LAYER CHARACTERIZED BY X-RAY REFLECTIVITY

An Sb delta doping layer in silicon is grown at the temperature of 300 degrees C by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam. The oscillations of the reflectivity caused by dopant Sb at Q a s large as 14.5 are detected. Simulation of this curve as a whole show s that the total amount of dopant Sb is 0.15 monolayer and is restrict ed to two atomic layers. An extremely narrow Sb delta doping structure without Sb segregation is thus obtained at the growth temperature of 300 degrees C as verified by the experiment.