CONTROL OF COMPOSITION AND GROWTH-RATE OF ZNMGS GROWN ON GAP BY MOLECULAR-BEAM EPITAXY USING EXCESS SULFUR BEAM PRESSURE

Authors
ICHINO K AKIYOSHI S KAWAKAMI T MISASA H KITAGAWA M KOBAYASHI H
Citation
K. Ichino et al., CONTROL OF COMPOSITION AND GROWTH-RATE OF ZNMGS GROWN ON GAP BY MOLECULAR-BEAM EPITAXY USING EXCESS SULFUR BEAM PRESSURE, JPN J A P 2, 36(10A), 1997, pp. 1283-1286
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
10A
Year of publication
1997
Pages
1283 - 1286
Database
ISI
SICI code
Abstract
We have grown ZnMgS ternary alloys on (100) GaP substrates by molecula r beam epitaxy. Using excess sulfur beam pressure evaporated from an e lemental S source, we successfully controlled the alloy composition an d the growth rate around the lattice-match condition to GaP substrates , which were not reproducible when the S beam nas not used. From photo luminescence excitation spectra, it is observed that the band gap of Z n0.80Mg0.20S, which is lattice-matched to GaP, is 0.15 eV larger than that of ZnS.