TIP-INDUCED ELECTRON OCCUPATION OF AN UNOCCUPIED SURFACE-STATE IN SCANNING-TUNNELING-MICROSCOPY IMAGING OF A GAAS(110) SURFACE WITH AG CLUSTERS

Authors
JIANG CS NAKAYAMA T AONO M
Citation
Cs. Jiang et al., TIP-INDUCED ELECTRON OCCUPATION OF AN UNOCCUPIED SURFACE-STATE IN SCANNING-TUNNELING-MICROSCOPY IMAGING OF A GAAS(110) SURFACE WITH AG CLUSTERS, JPN J A P 2, 36(10A), 1997, pp. 1336-1339
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
10A
Year of publication
1997
Pages
1336 - 1339
Database
ISI
SICI code
Abstract
Scanning tunneling microscopy (STM) images of a GaAs(110) surface with Ag clusters show that a Ga dangling bond state of this surface is occ upied or unoccupied depending on the polarity of sample bias, in certa in local regions of the surface. These results, which appear to be str ange at first glance, can be interpreted by taking the electric field due to the STM tip into consideration. All other details of observed S TM images can also be interpreted on the basis of this tip-induced fie ld effect.