CRYSTALLINE SILICON FILMS ON A NOVEL HIGH-TEMPERATURE GLASS FOR APPLICATIONS IN MICROELECTRONICS AND PHOTOVOLTAICS

We present a new, high temperature resistant silicate: glass developed for semiconductor applications. Formerly, the fabrication of crystall ine Si films on glass was limited by the low transformation temperatur e of commercially available glass substrates with T-g < 670 degrees C. Our new glass has a transformation temperature of T-g = 822 degrees C and a thermal expansion closely matched to crystalline Si. We use the new glass to deposit Si by low pressure chemical vapor deposition and solid phase crystallization at 600 degrees C and chemical vapor depos ition at 1000 degrees C. Our new glass for the first time bridges the gap between conventional crystalline Si technology using temperatures in the range of 800 to 1000 degrees C and glass as a substrate. (C) 19 97 Elsevier Science B.V.