ELECTRONIC-STRUCTURE OF (111)-GAASP ALGAAS STRAINED-LAYER QUANTUM-WELLS/

The GaAs1-xPx/AlyGa1-yAs (x = 0.07-0.14, y = 0.3) strained-layer multi ple quantum wells grown by metal-organic vapor phase epitaxy on GaAs-( 111)B substrates have been characterized by X-ray diffraction and phot oreflectance (PR) spectroscopy. By fitting the experimental results wi th the calculation which was based on the deformation potential theory modified by the strain-induced piezoelectric field, the energy band o ffset ratio for the conduction band at the heterointerface of GaAs1-xP /AlyGa1-yAs was quantitatively determined to be Q(c) = 0.61 +/- 0.03. This value was found to be nearly independent of the phosphorous compo sition x in the whole region that has been investigated in this study. Moreover, several anomalous phenomena observed with the PR measuremen t as well as the possible physical origins have also been discussed. ( C) 1997 Elsevier Science B.V.