SECONDARY-ION ENHANCEMENT IN SLOW HIGHLY-CHARGED HEAVY-ION BOMBARDMENT

Citation
M. Terasawa et al., SECONDARY-ION ENHANCEMENT IN SLOW HIGHLY-CHARGED HEAVY-ION BOMBARDMENT, Physica scripta. T, T73, 1997, pp. 326-328
Citations number
7
Categorie Soggetti
Physics
Journal title
ISSN journal
02811847
Volume
T73
Year of publication
1997
Pages
326 - 328
Database
ISI
SICI code
0281-1847(1997)T73:<326:SEISHH>2.0.ZU;2-7
Abstract
Carbon thin film was bombarded with high charge state Xeq+ ions, and t he secondary carbon yields were measured as a function of charge state in the broad range of q = 8 to 44 at the kinetic energy of 1.0 MeV an d, also, q = 44 at 175 keV. It is found that the secondary ion yields per incident ion increase with increasing q; the increase rate is rema rkably high in q > 26 with the rate of q(8.5) and rather moderate in q > 31. The yield and spectra of the secondary ions are not very differ ent for 1.0 MeV and 175 keV for Xeq+ (q = 44) ion incidence.