HALL-EFFECT AND MAGNETORESISTANCE IN CO-BASED AMORPHOUS AND CRYSTALLIZED ALLOYS

Citation
G. Bordin et al., HALL-EFFECT AND MAGNETORESISTANCE IN CO-BASED AMORPHOUS AND CRYSTALLIZED ALLOYS, Journal of magnetism and magnetic materials, 172(3), 1997, pp. 291-300
Citations number
17
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
03048853
Volume
172
Issue
3
Year of publication
1997
Pages
291 - 300
Database
ISI
SICI code
0304-8853(1997)172:3<291:HAMICA>2.0.ZU;2-5
Abstract
We have analyzed the crystallization effects on the Hall resistivity a nd magnetoresistance in two different sets of Go-based amorphous glass es having a similar composition and commercially known as Metglas and Vitrovac. The behaviours of the Hall constants R-o and R-S show that t he mobility mu of the conduction electrons of the crystallized phase i s improved in comparison with that of the amorphous phase and at the s ame time the scattering effects are reduced. Moreover, the ferromagnet ic anisotropic resistivity (FAR) increases with the Co percent content and decreases with resistivity while this does not occur in crystalli zed samples. In the latter, the longitudinal and transverse variations of resistivity with applied magnetic held are equivalent, but the val ues of the FAR are much higher than those of the amorphous state. The behaviour of the nanostructured samples is quite similar to that of th e amorphous state.