We report a high power mid-infrared interband cascade laser operating
at temperatures up to 170 K. The threshold current densities of this l
aser are considerably lower than the previously reported values in cas
cade lasers. The structure was grown by molecular beam epitaxy on a Ga
Sb substrate and comprises 23 periods of active regions separated by d
igitally graded multilayer injection regions. A peak optical output po
wer of similar to 0.5 W/facet and a slope of 211 mW/A per facet, corre
sponding to a differential external quantum efficiency of 131%, are ob
served at 80 K and at a wavelength of similar to 3.9 mu m. (C) 1997 Am
erican Institute of Physics. [S0003-6951 (97)00443-9].