ENERGY-GAP NARROWING IN CURRENT INJECTED INGAN ALGAN SURFACE LIGHT-EMITTING DIODE/

The emission spectrum of a current injected InGaN/AlGaN surface emitti ng diode has been investigated, A clear redshift of the low energy edg e with increasing injected current has been observed. and is attribute d to the many body effects. The carrier density and band gap narrowing are obtained by fitting the line shape of the emission spectrum, usin g Landsberg model which includes many body effects. A redshift of arou nd 92 meV of the low energy edge is obtained as injected current incre ases from 400 to 4000 mA. The band gap change can be described well in proportion to the 1/3 power of the carrier density, which is just sug gested by the exchange energy of electron-electron, and hole-hole inte ractions. (C) 1997 American Institute of Physics. [S0003-6951(97)03543 -2].